The AT410 is a compact, table-top ALD system designed for precision thin-film deposition on substrates up to 4" (100 mm) in diameter. Its temperature-controlled all-aluminum chamber reaches up to 330°C, providing uniform heating and high reproducibility. Ideal for research and development or pilot-scale production, the AT410 combines high-end capabilities with ease of use, maintenance, and cost-efficiency compared to competing systems.
High-precision precursor dosing
The AT410 delivers accurate, volume-controlled precursor dosing, reducing variability and ensuring consistent thin-film growth. Fast cycling allows 6–10 cycles per minute, achieving deposition rates up to 1.2 nm/min for Al₂O₃, making it one of the fastest desktop ALD systems in its class.
System features
- Substrate support up to 4" (100 mm) diameter (custom sizes available)
- Chamber temperature: RT to 400°C ±1°C
- Precursor temperature: RT to 150°C ±2°C (optional heating jackets)
- Standard configuration: 2 counter-reactants, 1 liquid source (e.g., H₂O/H₂O₂), 1 gas source (e.g., O₂/NH₃); up to 2 gas sources supported
- Variable process pressure control: 0.1–1.5 Torr
- All-metal sealed system upstream of the sample
- Up to 3 heated precursor sources
- Valve time and volume-controlled dosing for maximum repeatability
- Exposure control with point-source gas distribution for superior uniformity
- Integrated angled HMI with PLC control and robust 7" touchscreen
- Preloaded, proven recipes for rapid process setup
- Compact footprint: 55 cm (W) × 55 cm (D) × 39 cm (H)
- Cleanroom compatible, weight 45 kg
- Simple maintenance and integrated vacuum interlock
Support & Reliability
The AT410 comes with excellent process development support, including evidence-based guidance from expert laboratory scientists, helping users achieve optimal ALD results from day one.
