AT410 Base ALD System
Temperature-controlled all aluminum chamber, up to 330°C, with up to 4" diameter sample holder. Table-Top Atomic Layer Deposition Unit, suitable for up to 5 lines. The tool boasts capabilities that meet or exceed those found in other tools on the market, while being easy to use and maintain - at a cost well below what can be found on the market today.
Precise precursor dosing with defined dose volumes:
- Fast cycling capability
- 6 to 10 cycles/min or up to 1.2nm/min Al2O3 (best in class)
- Reduces process and dose variability common to competitors
Features:
- Substrate size up to 4" (100 mm) diameter (Other Wafer Sizes on Request!)
- Chamber temperatures from RT to 400°C ± 1°C
- Precursor temperatures from RT to 150°C ± 2°C (with optional heating jackets)
- 2 Counter reactants - standard
- 1 liquid source such as H2O or H2O2
- 1 gas source such as O2 or NH3
- 2 gas sources can be used as well
- Variable process pressure control 0.1 to 1.5Torr
- All metal sealed system upstream of sample
- Up to 3x Heated sources
- Volume controlled dosing (Volume control yields more repeatable precursor doses)
- Valve time controlled dosing
- Exposure Control
- Point source Gas Distribution with Optimal Spreading for superior film uniformity
- Integrated, angled HMI/PLC SW/Controls (prevents random SW lockups)
- Robust 7" touchscreen PLC control system
- Recipe Control: proven recipes pre-loaded in controller
- Smallest Footprint on the market: 55 cm (W) x 55 cm (D) X 39 cm (H)
- Cleanroom Compatible
- Weight 45 kgs
Simple system maintenance and integrated vacuum interlock.
Excellent Process Development Support (Harvard lab scientsts provide evidence based assistance to customers)
